IndiumV3, Main, Repository, bibRecord, 000A90

InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

Identifieur interne : 000A90 ( Main/Repository ); précédent : 000A89; suivant : 000A91

InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

Auteurs : RBID : Pascal:14-0027397

Descripteurs français

Pascal (Inist)
- Cellule solaire, Dispositif photovoltaïque, Effet dimensionnel, Paire électron trou, Performance, Tension circuit ouvert, Piège lumineux, Phosphure d'indium, Nanofil, Réseau (arrangement), Jonction p i n, InP.

English descriptors

KwdEn :
- Array, Electron hole pair, Indium phosphide, Light trap, Nanowires, Open circuit voltage, Performance, Photovoltaic cell, Size effect, Solar cell, p i n junctions.

Abstract

Photovoltaics based on nanowire arrays could reduce cost and materials consumption compared with planar devices but have exhibited low efficiency of light absorption and carrier collection. We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance. Efficiencies up to 13.8% (comparable to the record planar InP cell) were achieved by using resonant light trapping in 180-nanometer-diameter nanowires that only covered 12% of the surface. The share of sunlight converted into photocurrent (71%) was six times the limit in a simple ray optics description. Furthermore, the highest open-circuit voltage of 0.906 volt exceeds that of its planar counterpart, despite about 30 times higher surface-to-volume ratio of the nanowire cell.

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Pascal:14-0027397

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit</title>
<author><name sortKey="Wallentin, Jesper" uniqKey="Wallentin J">Jesper Wallentin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Anttu, Nicklas" uniqKey="Anttu N">Nicklas Anttu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Asoli, Damir" uniqKey="Asoli D">Damir Asoli</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Sol Voltaics AB, Ideon Science Park, Scheelevägen 17</s1>
<s2>22370 Lund</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22370 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Huffman, Maria" uniqKey="Huffman M">Maria Huffman</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Sol Voltaics AB, Ideon Science Park, Scheelevägen 17</s1>
<s2>22370 Lund</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22370 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Aberg, Ingvar" uniqKey="Aberg I">Ingvar Aberg</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Sol Voltaics AB, Ideon Science Park, Scheelevägen 17</s1>
<s2>22370 Lund</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22370 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Magnusson, Martin H" uniqKey="Magnusson M">Martin H. Magnusson</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Sol Voltaics AB, Ideon Science Park, Scheelevägen 17</s1>
<s2>22370 Lund</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22370 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Siefer, Gerald" uniqKey="Siefer G">Gerald Siefer</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Fraunhofer ISE, Heidenhofstrasse 2</s1>
<s2>79110 Freiburg</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Fribourg-en-Brisgau</region>
<settlement type="city">Fribourg-en-Brisgau</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Fuss Kailuweit, Peter" uniqKey="Fuss Kailuweit P">Peter Fuss-Kailuweit</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Fraunhofer ISE, Heidenhofstrasse 2</s1>
<s2>79110 Freiburg</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Fribourg-en-Brisgau</region>
<settlement type="city">Fribourg-en-Brisgau</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Dimroth, Frank" uniqKey="Dimroth F">Frank Dimroth</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Fraunhofer ISE, Heidenhofstrasse 2</s1>
<s2>79110 Freiburg</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Fribourg-en-Brisgau</region>
<settlement type="city">Fribourg-en-Brisgau</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Witzigmann, Bernd" uniqKey="Witzigmann B">Bernd Witzigmann</name>
<affiliation wicri:level="3"><inist:fA14 i1="04"><s1>University of KasseL Wilhelmshoeher Allee 71</s1>
<s2>34121, Kassel</s2>
<s3>DEU</s3>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Hesse (Land)</region>
<region type="district" nuts="2">District de Kassel</region>
<settlement type="city">Cassel (Hesse)</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Xu, H Q" uniqKey="Xu H">H. Q. Xu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University</s1>
<s2>Beijing 100871</s2>
<s3>CHN</s3>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Samuelson, Lars" uniqKey="Samuelson L">Lars Samuelson</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Deppert, Knut" uniqKey="Deppert K">Knut Deppert</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Borgstrom, Magnus T" uniqKey="Borgstrom M">Magnus T. Borgström</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>22100 Lund</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0027397</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 14-0027397 INIST</idno>
<idno type="RBID">Pascal:14-0027397</idno>
<idno type="wicri:Area/Main/Corpus">000261</idno>
<idno type="wicri:Area/Main/Repository">000A90</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0036-8075</idno>
<title level="j" type="abbreviated">Science : (Wash. D.C.)</title>
<title level="j" type="main">Science : (Washington, D.C.)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Array</term>
<term>Electron hole pair</term>
<term>Indium phosphide</term>
<term>Light trap</term>
<term>Nanowires</term>
<term>Open circuit voltage</term>
<term>Performance</term>
<term>Photovoltaic cell</term>
<term>Size effect</term>
<term>Solar cell</term>
<term>p i n junctions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term>
<term>Dispositif photovoltaïque</term>
<term>Effet dimensionnel</term>
<term>Paire électron trou</term>
<term>Performance</term>
<term>Tension circuit ouvert</term>
<term>Piège lumineux</term>
<term>Phosphure d'indium</term>
<term>Nanofil</term>
<term>Réseau (arrangement)</term>
<term>Jonction p i n</term>
<term>InP</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Photovoltaics based on nanowire arrays could reduce cost and materials consumption compared with planar devices but have exhibited low efficiency of light absorption and carrier collection. We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance. Efficiencies up to 13.8% (comparable to the record planar InP cell) were achieved by using resonant light trapping in 180-nanometer-diameter nanowires that only covered 12% of the surface. The share of sunlight converted into photocurrent (71%) was six times the limit in a simple ray optics description. Furthermore, the highest open-circuit voltage of 0.906 volt exceeds that of its planar counterpart, despite about 30 times higher surface-to-volume ratio of the nanowire cell.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0036-8075</s0>
</fA01>
<fA02 i1="01"><s0>SCIEAS</s0>
</fA02>
<fA03 i2="1"><s0>Science : (Wash. D.C.)</s0>
</fA03>
<fA05><s2>339</s2>
</fA05>
<fA06><s2>6123</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>WALLENTIN (Jesper)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>ANTTU (Nicklas)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ASOLI (Damir)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>HUFFMAN (Maria)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ABERG (Ingvar)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>MAGNUSSON (Martin H.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>SIEFER (Gerald)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>FUSS-KAILUWEIT (Peter)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>DIMROTH (Frank)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>WITZIGMANN (Bernd)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>XU (H. Q.)</s1>
</fA11>
<fA11 i1="12" i2="1"><s1>SAMUELSON (Lars)</s1>
</fA11>
<fA11 i1="13" i2="1"><s1>DEPPERT (Knut)</s1>
</fA11>
<fA11 i1="14" i2="1"><s1>BORGSTRÖM (Magnus T.)</s1>
</fA11>
<fA14 i1="01"><s1>Solid State Physics, Lund University, Box 118</s1>
<s2>22100 Lund</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>14 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Sol Voltaics AB, Ideon Science Park, Scheelevägen 17</s1>
<s2>22370 Lund</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Fraunhofer ISE, Heidenhofstrasse 2</s1>
<s2>79110 Freiburg</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>University of KasseL Wilhelmshoeher Allee 71</s1>
<s2>34121, Kassel</s2>
<s3>DEU</s3>
<sZ>10 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University</s1>
<s2>Beijing 100871</s2>
<s3>CHN</s3>
<sZ>11 aut.</sZ>
</fA14>
<fA20><s1>1057-1060</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>6040</s2>
<s5>354000182585830200</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>28 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>14-0027397</s0>
</fA47>
<fA60><s1>P</s1>
<s3>C</s3>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Science : (Washington, D.C.)</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Photovoltaics based on nanowire arrays could reduce cost and materials consumption compared with planar devices but have exhibited low efficiency of light absorption and carrier collection. We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance. Efficiencies up to 13.8% (comparable to the record planar InP cell) were achieved by using resonant light trapping in 180-nanometer-diameter nanowires that only covered 12% of the surface. The share of sunlight converted into photocurrent (71%) was six times the limit in a simple ray optics description. Furthermore, the highest open-circuit voltage of 0.906 volt exceeds that of its planar counterpart, despite about 30 times higher surface-to-volume ratio of the nanowire cell.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Photovoltaic cell</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Effet dimensionnel</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Size effect</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Efecto dimensional</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Paire électron trou</s0>
<s5>06</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Electron hole pair</s0>
<s5>06</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Par electrón hueco</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Performance</s0>
<s5>11</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Performance</s0>
<s5>11</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Rendimiento</s0>
<s5>11</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Tension circuit ouvert</s0>
<s5>12</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Open circuit voltage</s0>
<s5>12</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Piège lumineux</s0>
<s5>13</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Light trap</s0>
<s5>13</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Captura por luz</s0>
<s5>13</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Nanofil</s0>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Nanowires</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Réseau (arrangement)</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Array</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Red</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Jonction p i n</s0>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>p i n junctions</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fN21><s1>027</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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   |texte=   InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit
}}

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InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

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